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C rss Reverse Transfer Capacitance. Pulse width limited by maximum junction temperature 2. Q gs 4n60b datasheet Charge. Essentially independent of operating temperature. Zero Gate Voltage Drain Current. Sign In or Register now. Q gd Gate-Drain Charge. Chao Feng Wei Electronics Co. 4n60b datasheet, June Free Datasheet http: These devices are well.

4N60B Datasheet

VDrain-Source Voltage [V]. Substitute product for 4N60B. Arizona governor suspends Uber’s self-driving car tests. Shipping Method Delivery time Shipping 4n60b datasheet Tracking information. Thermal Resistance, 4n60b datasheet Max. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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4N60B datasheet, 4N60B pdf, N-Chanel Power MOSFET – 01

Transfer Characteristics 10 1 10 0 10 -1 0. Thermal Resistance, Junction-to-Case Max. Q rr Reverse Recovery 4n60b datasheet. Drain Current and Gate Voltage. Body Diode Forward Voltage. Reviews No reviews for now.

Gate Charge Characteristics Rev. C iss Input Capacitance.

Essentially independent of operating temperature 6. Shenzhen profit Microelectronics Co. RoHS compliant Substitute Product. View 4n60b datasheet for Mobile. Thermal Resistance, Dayasheet Typ. Q g Total Gate Charge. I DDrain Current [A]. Min Typ Max Units.